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    Influence of Homoepitaxial Layer Thickness on Flatness and Chemical Mechanical Planarization Induced Scratches of 4H-Silicon Carbide Epi-Wafers

    Influence of Homoepitaxial Layer Thickness on Flatness and Chemical Mechanical Planarization Induced Scratches of 4H-Silicon Carbide Epi-Wafers by Chi-Hsiang Hsieh, Chiao-Yang Cheng, Yi-Kai Hsiao, Zi-Hao Wang, Chang-Ching Tu, Chao-Chang Arthur Chen, Po-Tsung Lee, Hao-Chung Kuo

    Published 2025-06-01
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