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    Process-Dependent Evolution of Channel Stress and Stress-Induced Mobility Gain in FinFET, Normal GAAFET, and Si/SiGe Hybrid Channel GAAFET

    Process-Dependent Evolution of Channel Stress and Stress-Induced Mobility Gain in FinFET, Normal GAAFET, and Si/SiGe Hybrid Channel GAAFET by Chiang Zhu, Xiaona Zhu, Shaofeng Yu, David Wei Zhang

    Published 2025-01-01
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