Origin of the Threshold Voltage Shift in a Transistor with a 2D Electron Gas Channel at the Al2O3/SrTiO3 Interface by Taehwan Moon, Hyun Jae Lee, Seung Dam Hyun, Baek Su Kim, Ho Hyun Kim, Cheol Seong Hwang

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Gate Engineering Effect in Ferroelectric Field‐Effect Transistors with Al‐Doped HfO2 Thin Film and Amorphous Indium‐Gallium‐Zinc‐Oxide Channel by Jae Hoon Lee, Yonghee Lee, Joon‐Kyu Han, Kyung Do Kim, Seung Ryong Byun, Hyeon Woo Park, Cheol Seong Hwang

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Decoupling polarization and coercive field in AlScN/AlN/AlScN stack for enhanced performance in ferroelectric thin-film transistors by Kyung Do Kim, Seung Kyu Ryoo, Min Kyu Yeom, Suk Hyun Lee, Wonho Choi, Yunjae Kim, Jung-Hae Choi, Tianjiao Xin, Yan Cheng, Cheol Seong Hwang

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Enhancing ferroelectric properties of Hf0.5Zr0.5O2 thin films using the HfN/TiN and W/TiN bi-layer bottom electrodes by Han Sol Park, Joong Chan Shin, Kyung Do Kim, Seong Jae Shin, Jae Hee Song, Seung Kyu Ryoo, In Soo Lee, Suk Hyun Lee, Hyunwoo Nam, Cheol Seong Hwang

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Influence of deposition temperature and precursor chemistry on the properties of atomic layer deposited Hf0.5Zr0.5O2 thin films by Seong Jae Shin, Hani Kim, Seungyong Byun, Jonghoon Shin, Jinwoo Choi, Suk Hyun Lee, Kyung Do Kim, Jae Hee Song, Dong Hoon Shin, Soo Hyung Lee, In Soo Lee, Hyunwoo Nam, Cheol Seong Hwang

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