Improved performance of lateral β-Ga2O3 Schottky barrier diodes by nitrogen thermal annealing by Yu-Ru Li, Anoop Kumar Singh, Yu-Cheng Kao, Dong-Sing Wuu, Ching-Lien Hsiao, Kenneth Järrendahl, Ray-Hua Horng

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MOCVD-grown ε(κ)-Ga2O3 with highly preferred orientation for memristor applications by Po-Kai Kung, Hsin-Yu Chou, Wei-Hsiang Chiang, Anoop Kumar Singh, Wen-Hao Lee, Tung-Han Wu, Ray-Hua Horng, Dong-Sing Wuu

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Impact of ion implantation on the performance of AlGaInP Micro-LEDs by Wei-Hsiang Chiang, Yen-Ru Chen, Yu-Chih Hsu, Shiang-Jiun Lo, Anoop Kumar Singh, Hsin-Yu Chou, Po-Liang Liu, Dong-Sing Wuu

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Fabrication of vertical gallium oxide PN diodes using homoepitaxial growth by MOCVD and ion implantation technology by Chih-Yang Huang, Xin-Ying Tsai, Fu-Gow Tarntair, Anoop Kumar Singh, Shao-Hui Hsu, Dong-Sing Wuu, Kenneth Järrendahl, Ching-Lien Hsiao, Ray-Hua Horng

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Oxygen effect on the performance of β-Ga2O3 enhancement mode MOSFETs heteroepitaxially grown on a sapphire by Yueh-Han Chuang, Fu-Gow Tarntair, Tzu-Wei Wang, Anoop Kumar Singh, Po-Liang Liu, Dong-Sing Wuu, Hao-Chung Kuo, Xiuling Li, Ray-Hua Horng

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