Physical and electrical characterizations of low n-doped MOCVD GaN-on-sapphire layers for power electronics applications by Ndembi Ignoumba-Ignoumba, Camille Sonneville, Adrien Bidaud, Pierre Brosselard, Eric Frayssinet, Florian Bartoli, Yvon Cordier, Farid Medjdoub, Dominique Planson, Cyril Buttay

Get full text