Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x0≤x≤1 Solid Solution, Grown on Si and GaP Substrates with the Crystallographic Orientation (111)

Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x0≤x≤1 Solid Solution, Grown on Si and GaP Substrates with the Crystallographic Orientation (111)

Epitaxial layers of the solid solution of molecular substitution (Si2)1-x(GaP)x (0 ≤ x ≤ 1) on Si (111) and GaP (111) substrates are grown by liquid-phase epitaxy from an Sn solution-melt. Such graded-gap solid solutions allow the integration of well-established silicon technology with the advantage...

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Main Authors: A. S. Saidov, D. V. Saparov, Sh.N. Usmonov, A. Kutlimratov, J.M. Abdiev, M. Kalanov, A.Sh. Razzakov, A.M. Akhmedov
Format: Article
Language:English
Published: Wiley 2021-01-01
Series:Advances in Condensed Matter Physics
Online Access:http://dx.doi.org/10.1155/2021/3472487
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http://dx.doi.org/10.1155/2021/3472487

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