Model of Reversible Breakdown in HfO2 Based on Fractal Patterns
We propose a model of the kinetics of reversible breakdown in metal-insulator-metal structures with afnia based on the growth of fractal patterns of defects when the insulator is subject to an external voltage. The probability that a defect is (or is not) generated and the position where it is gener...
Saved in:
| Main Authors: | P. Lorenzi, R. Rao, G. Romano, F. Irrera |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2015-01-01
|
| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2015/136938 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Electrical Properties of Schottky Devices from HfO2 and ZnO/HfO2 Thin Films: Morphological, Structural, and Optical Investigations
by: Ayten Seçkin, et al.
Published: (2025-02-01) -
Electronic Properties of Atomic Layer Deposited HfO<sub>2</sub> Thin Films on InGaAs Compared to HfO<sub>2</sub>/GaAs Semiconductors
by: Irving K. Cashwell, et al.
Published: (2024-08-01) -
The Hydrothermal Autoclave Synthesis of the Nanopowders of the Refractory ZrO2 and HfO2 Oxides
by: N.F. Karpovich, et al.
Published: (2015-12-01) -
Ferroelectric HfO2–ZrO2 Multilayers with Reduced Wake-Up
by: Barnik Mandal, et al.
Published: (2025-03-01) -
Current Mechanism in HfO2-Gated Metal-Oxide-Semiconductor Devices
by: Osman Pakma
Published: (2012-01-01)