Possibility of Application of Topological Consideration for Grain Boundaries in Nanosilicon Films
A comparative analysis of the experimentally observed by atomic force microscopy grain boundary structure of nanosilicon films with the existing model representations was carried out. It is shown that the topological model of structural changes may be used for the analysis of changes of grain bounda...
Saved in:
| Main Authors: | N.G. Nakhodkin, T.V. Rodionova |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2016-12-01
|
| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2016/4/articles/jnep_2016_V8_04084.pdf |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Grain-boundary diffusion in Cu and Ni films with thin metal coating
by: T.P. Hovorun, et al.
Published: (2009-01-01) -
Weighted average study of transition metal segregation at Ni grain boundaries and its effect on grain boundary cohesion
by: Yanyan Shi, et al.
Published: (2025-05-01) -
Bio-efficacy of Nanosilicon in Regulating Oxidative Activity to Control Rice Seedlings Rot Disease Caused by Burkholderia glumae
by: Tamilselvan R. Govinda Rajoo, et al.
Published: (2025-04-01) -
Modeling of Field Effect Mobility Using Grain Boundaries on Nanocrystalline Silicon Thin-Film Transistor (nc-Si TFT)
by: Abhishek Mukherjee, et al.
Published: (2014-01-01) -
An understanding of the segregation and migration mechanism of point defects in tungsten grain boundaries: An atomic scale simulation
by: Ya-Wen Li, et al.
Published: (2024-12-01)