Influence of UnevenTemperature on Current Distribution in Paralleled Multi-Chips Press Pack IGBT
The multi-chip parallel press pack IGBT device is a key component in flexible DC transmission equipment. Due to manufacturing processes, loop parasitic parameters and thermal coupling, the internal stress distribution of the device is imbalance, resulting in uneven aging of the device, the temperatu...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | zho |
| Published: |
State Grid Energy Research Institute
2020-12-01
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| Series: | Zhongguo dianli |
| Subjects: | |
| Online Access: | https://www.electricpower.com.cn/CN/10.11930/j.issn.1004-9649.202004065 |
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| Summary: | The multi-chip parallel press pack IGBT device is a key component in flexible DC transmission equipment. Due to manufacturing processes, loop parasitic parameters and thermal coupling, the internal stress distribution of the device is imbalance, resulting in uneven aging of the device, the temperature distribution uneven, and the current distribution imbalance. This paper focuses on the problem of uneven current distribution caused by different temperature imbalance. First, the causes of uneven current sharing of IGBT devices and the effect of temperature on the uneven current characteristics are analyzed. Then, the single-chip press pack IGBT devices are used in parallel to simulate the effect of the uneven temperature distribution which is used for the experiment about the effect of temperature imbalance degree on the current distribution of the multi-chip devices. Finally, the relationship between the temperature difference and the degree of current imbalance is verified by experiment. It lays a scientific and technical foundation for improving the operational reliability of the device and cognizing the failure mechanism of the press pack IGBT. |
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| ISSN: | 1004-9649 |