GaN Low-dimensional Structures
The GaN low-dimensional structures obtained by nitridation of GaAs porous layers were investigated for the first time. The process of GaN quantum dots formation on the GaAs surface was considered. This process was a result of electrochemical etching of GaAs followed by treatment in atomic nitrogen e...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2014-11-01
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| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2014/4/articles/jnep_2014_V6_04043.pdf |
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| Summary: | The GaN low-dimensional structures obtained by nitridation of GaAs porous layers were investigated for the first time. The process of GaN quantum dots formation on the GaAs surface was considered. This process was a result of electrochemical etching of GaAs followed by treatment in atomic nitrogen environment. Nitrogen atoms, which were deposited on the GaAs surface, replace arsenic ones that lead to the formation of a thin GaN layer on the GaAs surface. The photoluminescence and surface morphology of the structures obtained were studied by scanning electron spectroscopy. |
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| ISSN: | 2077-6772 |