Al <sub>0.4</sub>Ga <sub>0.6</sub>N/Al <sub>0.15</sub>Ga <sub>0.85</sub>N Separate Absorption and Multiplication Solar-Blind Avalanche Photodiodes With a One-Dimensional Photonic Crystal Filter
An Al <sub>0.15</sub>Ga <sub>0.85</sub>N/Al <sub>0.4</sub>Ga <sub>0.6</sub>N separate absorption and multiplication avalanche photodiode (APD) integrated with the 1-D photonic crystal (PC) filter with a three-period antireflection coating between the a...
Saved in:
| Main Authors: | Kexiu Dong, Dunjun Chen, Biaobing Jin, Xishun Jiang, Jianping Shi |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2016-01-01
|
| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/7542124/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Polarization Enhanced GaN Avalanche Photodiodes With p-type In<sub>0.05</sub>Ga<sub>0.95</sub>N Layer
by: Haiping Wang, et al.
Published: (2020-01-01) -
Effect of Inductively Coupled Plasma Etching Parameters on n-Al<sub>0.5</sub>Ga<sub>0.5</sub>N Ohmic Contact
by: Shanshan Yang, et al.
Published: (2024-01-01) -
Fine Control of the Electric Field Distribution in the Heterostructure Multiplication Region of AlGaN Avalanche Photodiodes
by: Haifan You, et al.
Published: (2017-01-01) -
Lateral Si<sub>0.15</sub>Ge<sub>0.85</sub>/Ge/Si<sub>0.15</sub>Ge<sub>0.85</sub> Double-Heterojunction Laser With SiN Stressor
by: Xinyang Sun, et al.
Published: (2023-01-01) -
An Improved Design for Solar-Blind AlGaN Avalanche Photodiodes
by: Qing Cai, et al.
Published: (2017-01-01)