A universal approach for thin high-entropy oxides regulated by Ga2O3 layers for oxygen evolution reaction

A universal approach for thin high-entropy oxides regulated by Ga2O3 layers for oxygen evolution reaction

Abstract High-entropy oxides (HEOs) are a class of promising materials with multielement tunability and untold scientific merits, yet the controllable preparation of nano-sized HEOs is notoriously difficult. Herein, we utilize the natural oxide layer on liquid gallium as an ideal substrate to facili...

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Bibliographic Details
Main Authors: Wenyang Zhang, Huixin Jin, Yanna Guo, Yinghao Cui, Jingyu Qin, Jianxin Zhang, Yusuke Yamauchi, Yoshiyuki Sugahara
Format: Article
Language:English
Published: Nature Portfolio 2025-07-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-025-60399-9
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